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| TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES * * * * * * * * * * * * * Package type: leaded Package form: side view Dimensions (L x W x H in mm): 3.6 x 2.2 x 5 Peak wavelength: p = 950 nm High reliability High radiant power High radiant intensity Angle of half intensity: = 25, horizontal Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Package matched with detector TEST2600 Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC 94 8672 DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with side view lens. with APPLICATIONS * Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600) PRODUCT SUMMARY COMPONENT TSSS2600 Ie (mW/sr) 2.6 (deg) 25 p (nm) 950 tr (ns) 800 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSSS2600 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM Side view ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t 5 s, 2 mm from case Leads not soldered tp/T = 0.5, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 2.0 170 100 - 40 to + 100 - 40 to + 100 260 450 UNIT V mA mA A mW C C C C K/W www.vishay.com 244 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81042 Rev. 1.6, 05-Sep-08 TSSS2600 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 250 125 PV - Power Dissipation (mW) 200 IF - Forward Current (mA) 100 150 RthJA 100 75 RthJA 50 50 25 0 0 94 8029 0 20 40 60 80 100 94 7916 0 20 40 60 80 100 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Virtual source diameter Note Tamb = 25 C, unless otherwise specified TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 s IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA horizontal vertical IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A SYMBOL VF VF TKVF IR Cj Ie Ie e TKe 1 2 p TKp tr tr tf tf d 1 30 2.6 25 20 - 0.8 25 60 950 50 0.2 800 400 800 400 2 3 MIN. TYP. 1.25 2.2 - 1.3 100 MAX. 1.6 UNIT V V mV/K A pF mW/sr mW/sr mW %/K deg deg nm nm nm/K ns ns ns ns mm Document Number: 81042 Rev. 1.6, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 245 TSSS2600 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 1.6 I F - Forward Current (mA) 1.2 Ie rel; e rel IF = 20 mA 0.8 0.4 0 1 2 3 4 0 - 10 0 10 94 7993 50 100 140 V F - Forward Voltage (V) T amb - Ambient Temperature (C) Fig. 3 - Pulse Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity/Power vs. Ambient Temperature 100 I e - Radiant Intensity (mW/sr) e rel - Relative Radiant Power 1.25 1.0 10 0.75 0.5 1 0.25 IF = 100 mA 0 900 950 1000 0.1 10 0 94 7967 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 7994 - Wavelength (nm) Fig. 4 - Radiant Intensity vs. Forward Current Fig. 7 - Relative Radiant Power vs. Wavelength 0 10 20 30 100 e - Radiant Power (mW) I e rel - Relative Radiant Intensity 40 1.0 0.9 0.8 0.7 50 60 70 80 10 1 0.1 1 13718 10 100 1000 94 7969 0.6 0.4 0.2 0 horizontal I F - Forward Current (mA) Fig. 5 - Radiant Power vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement www.vishay.com 246 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81042 Rev. 1.6, 05-Sep-08 - Angular Displacement TSSS2600 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 0 I e rel - Relative Radiant Intensity 10 20 30 - Angular Displacement 1.2 nom. 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 vertical 94 7970 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters - 0.1 0.3 0.3 < 0.7 3.4 6.9 Emitter center Area not plane 0.5 28.9 3.6 0.15 1.8 + 0.1 - 0.15 0.15 0.65 2.2 0.15 C A 0.5 + 0.2 - 0.1 0.4 0.15 2.54 nom. 0.6 x 45 0.4 + 0.15 R 0.7 5 60 technical drawings according to DIN specifications Drawing-No.: 6.544-5241.01-4 Issue: 3; 18.04.96 95 11488 0.3 0.5 - 0.1 0.3 + 0.1 0.3 Document Number: 81042 Rev. 1.6, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 247 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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